IP Library Granted Patent US 4,670,090
Granted Patent Utility
US 4,670,090 · App. 06/821,664

Method for producing a field effect transistor

Inventors: Neng-Haung Sheng, Mau-Chung Frank Chang, Chien-Ping Lee
Patented Case View Patent ↗
Granted: Jun 2, 1987 Filed: Jan 23, 1986
Inventors
Neng-Haung Sheng
Mau-Chung Frank Chang
Chien-Ping Lee
Assignee (at issue)
Rockwell International Corporation

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Quick Facts
Patent No.
US 4,670,090
App. No.
06/821,664
Filed
1986-01-23
Granted
1987-06-02
Kind
A