Granted Patent
Utility
US 4,683,485 · App. 06/813,718
Technique for increasing gate-drain breakdown voltage of ion-implanted JFET
Inventor:
Gregory A. Schrantz
Patented Case
View Patent ↗
Granted: Jul 28, 1987
Filed: Dec 27, 1985
Inventor
Gregory A. Schrantz
Assignee (at issue)
HARRIS CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.