Granted Patent
Utility
US 4,685,199 · App. 06/857,154
Method for forming dielectrically isolated PMOS, NMOS, PNP and NPN transistors on a silicon wafer
Inventor:
Lubomir L. Jastrzebski
Patented Case
View Patent ↗
Granted: Aug 11, 1987
Filed: Apr 29, 1986
Inventor
Lubomir L. Jastrzebski
Assignee (at issue)
RCA Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.