Granted Patent
Utility
US 4,692,996 · App. 06/800,257
Method of fabricating semiconductor devices in dielectrically isolated silicon islands
Inventor:
Yukio Minato
Patented Case
View Patent ↗
Granted: Sep 15, 1987
Filed: Nov 21, 1985
Inventor
Yukio Minato
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.