IP Library › Granted Patent US 4,701,776
Granted Patent Utility
US 4,701,776 · App. 06/936,965

MOS floating gate memory cell and process for fabricating same

Inventors: Gust Perlegos, Tsung-Ching Wu
Patented Case View Patent ↗
Granted: Oct 20, 1987 Filed: Dec 1, 1986
Inventors
Gust Perlegos
Tsung-Ching Wu
Assignee (at issue)
Seeq Technology, Incorporated

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Quick Facts
Patent No.
US 4,701,776
App. No.
06/936,965
Filed
1986-12-01
Granted
1987-10-20
Kind
A