Granted Patent
Utility
US 4,716,131 · App. 06/675,768
Method of manufacturing semiconductor device having polycrystalline silicon layer with metal silicide film
Inventors:
Takeshi Okazawa, Yoshiyuki Hirano
Patented Case
View Patent ↗
Granted: Dec 29, 1987
Filed: Nov 28, 1984
Inventors
Takeshi Okazawa
Yoshiyuki Hirano
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.