Granted Patent
Utility
US 4,740,480 · App. 07/095,406
Method for forming a semiconductor device with trench isolation structure
Inventor:
Hideyuki Ooka
Patented Case
View Patent ↗
Granted: Apr 26, 1988
Filed: Sep 11, 1987
Inventor
Hideyuki Ooka
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.