IP Library › Granted Patent US 4,744,859
Granted Patent Utility
US 4,744,859 · App. 06/922,509

Process for fabricating lightly doped drain MOS devices

Inventors: Yaw Wen Hu, Charles C. C. Kau
Patented Case View Patent ↗
Granted: May 17, 1988 Filed: Oct 23, 1986
Inventors
Yaw Wen Hu
Charles C. C. Kau
Assignee (at issue)
Vitelic Corporation

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Quick Facts
Patent No.
US 4,744,859
App. No.
06/922,509
Filed
1986-10-23
Granted
1988-05-17
Kind
A