Granted Patent
Utility
US 4,746,624 · App. 06/926,318
Method for making an LDD MOSFET with a shifted buried layer and a blocking region
Inventors:
Kit M. Cham, Paul Vande Voorde
Patented Case
View Patent ↗
Granted: May 24, 1988
Filed: Oct 31, 1986
Inventors
Kit M. Cham
Paul Vande Voorde
Assignee (at issue)
Hewlett-Packard Company, L.P.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.