Granted Patent
Utility
US 4,758,529 · App. 06/793,312
Method of forming an improved gate dielectric for a MOSFET on an insulating substrate
Inventor:
Alfred C. Ipri
Patented Case
View Patent ↗
Granted: Jul 19, 1988
Filed: Oct 31, 1985
Inventor
Alfred C. Ipri
Assignee (at issue)
RCA Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.