Granted Patent
Utility
US 4,764,482 · App. 07/124,129
Method of fabricating an integrated circuit containing bipolar and MOS transistors
Inventor:
Sheng Teng Hsu
Patented Case
View Patent ↗
Granted: Aug 16, 1988
Filed: Nov 23, 1987
Inventor
Sheng Teng Hsu
Assignee (at issue)
General Electric Company
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.