Granted Patent
Utility
US 4,769,682 · App. 07/039,888
Boron doped semiconductor materials and method for producing same
Inventors:
Chi C. Yang, Ralph Mohr, Stephen J. Hudgens, Annette Johncock, Prem Nath
Patented Case
View Patent ↗
Granted: Sep 6, 1988
Filed: Apr 20, 1987
Inventors
Chi C. Yang
Ralph Mohr
Stephen J. Hudgens
Annette Johncock
Prem Nath
Assignee (at issue)
Energy Conversion Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.