IP Library Granted Patent US 4,781,853
Granted Patent Utility
US 4,781,853 · App. 06/936,609

Method of enhancing silicon etching capability of alkali hydroxide through the addition of positive valence impurity ions

Inventors: Robert K. Lowry, Edward U. Adams
Patented Case View Patent ↗
Granted: Nov 1, 1988 Filed: Dec 1, 1986
Inventors
Robert K. Lowry
Edward U. Adams
Assignee (at issue)
HARRIS CORPORATION

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Quick Facts
Patent No.
US 4,781,853
App. No.
06/936,609
Filed
1986-12-01
Granted
1988-11-01
Kind
A