Granted Patent
Utility
US 4,786,609 · App. 07/104,187
Method of fabricating field-effect transistor utilizing improved gate sidewall spacers
Inventor:
Teh-Yi J. Chen
Patented Case
View Patent ↗
Granted: Nov 22, 1988
Filed: Oct 5, 1987
Inventor
Teh-Yi J. Chen
Assignee (at issue)
North American Philips Corp., Signetics Division
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.