IP Library › Granted Patent US 4,807,002
Granted Patent Utility
US 4,807,002 · App. 07/201,353

Mesfet transistor with gate spaced above source electrode by layer of air or the like method of fabricating same

Inventor: Giampiero Donzelli
Patented Case View Patent ↗
Granted: Feb 21, 1989 Filed: May 26, 1988
Inventor
Giampiero Donzelli
Assignee (at issue)
Telettra - Telefonia Elettronica e Radio S.p.A.

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Quick Facts
Patent No.
US 4,807,002
App. No.
07/201,353
Filed
1988-05-26
Granted
1989-02-21
Kind
A