Granted Patent
Utility
US 4,823,173 · App. 06/831,384
High voltage lateral MOS structure with depleted top gate region
Inventor:
James D. Beasom
Patented Case
View Patent ↗
Granted: Apr 18, 1989
Filed: Jan 7, 1986
Inventor
James D. Beasom
Assignee (at issue)
HARRIS CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.