Granted Patent
Utility
US 4,823,176 · App. 07/033,952
Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area
Inventors:
Bantval J. Baliga, Tat-Sing P. Chow, Hsueh-Rong Chang
Patented Case
View Patent ↗
Granted: Apr 18, 1989
Filed: Apr 3, 1987
Inventors
Bantval J. Baliga
Tat-Sing P. Chow
Hsueh-Rong Chang
Assignee (at issue)
General Electric Company
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.