Granted Patent
Utility
US 4,824,802 · App. 07/104,002
Method of filling interlevel dielectric via or contact holes in multilevel VLSI metallization structures
Inventors:
Dale M. Brown, Bernard Gorowitz, Richard Joseph Saia
Patented Case
View Patent ↗
Granted: Apr 25, 1989
Filed: Oct 2, 1987
Inventors
Dale M. Brown
Bernard Gorowitz
Richard Joseph Saia
Assignee (at issue)
General Electric Company
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.