Granted Patent
Utility
US 4,841,166 · App. 07/074,903
Limiting shoot-through current in a power MOSFET half-bridge during intrinsic diode recovery
Inventor:
James Harnden
Patented Case
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Granted: Jun 20, 1989
Filed: Jul 17, 1987
Inventor
James Harnden
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.