IP Library › Granted Patent US 4,841,347
Granted Patent Utility
US 4,841,347 · App. 06/792,789

MOS VLSI device having shallow junctions and method of making same

Inventor: Sheng Teng Hsu
Patented Case View Patent ↗
Granted: Jun 20, 1989 Filed: Oct 30, 1985
Inventor
Sheng Teng Hsu
Assignee (at issue)
General Electric Company

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Quick Facts
Patent No.
US 4,841,347
App. No.
06/792,789
Filed
1985-10-30
Granted
1989-06-20
Kind
A