IP Library Granted Patent US 4,853,340
Granted Patent Utility
US 4,853,340 · App. 07/176,145

Semiconductor device isolated by a pair of field oxide regions

Inventor: Michio Komatsu
Patented Case View Patent ↗
Granted: Aug 1, 1989 Filed: Mar 31, 1988
Inventor
Michio Komatsu
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 4,853,340
App. No.
07/176,145
Filed
1988-03-31
Granted
1989-08-01
Kind
A