Granted Patent
Utility
US 4,855,247 · App. 07/291,541
Process for fabricating self-aligned silicide lightly doped drain MOS devices
Inventors:
Di Ma, David H. Hoffman
Patented Case
View Patent ↗
Granted: Aug 8, 1989
Filed: Dec 29, 1988
Inventors
Di Ma
David H. Hoffman
Assignee (at issue)
STANDARD MICROSYSTEMS CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.