IP Library Granted Patent US 4,857,983
Granted Patent Utility
US 4,857,983 · App. 07/051,430

Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication

Inventors: Bantval J. Baliga, Deva Pattanayak
Patented Case View Patent ↗
Granted: Aug 15, 1989 Filed: May 19, 1987
Inventors
Bantval J. Baliga
Deva Pattanayak
Assignee (at issue)
General Electric Company

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Quick Facts
Patent No.
US 4,857,983
App. No.
07/051,430
Filed
1987-05-19
Granted
1989-08-15
Kind
A