IP Library Granted Patent US 4,861,393
Granted Patent Utility
US 4,861,393 · App. 07/057,679

Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers on Si utilizing molecular beam epitaxy

Inventors: John C. Bean, Leonard C. Feldman, Anthony T. Fiory
Patented Case View Patent ↗
Granted: Aug 29, 1989 Filed: May 28, 1987
Inventors
John C. Bean
Leonard C. Feldman
Anthony T. Fiory
Assignee (at issue)
American Telephone and Telegraph Company, AT&T Bell Laboratories

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Quick Facts
Patent No.
US 4,861,393
App. No.
07/057,679
Filed
1987-05-28
Granted
1989-08-29
Kind
A