Granted Patent
Utility
US 4,871,687 · App. 07/261,142
Method of fabricating a MESFET transistor with gate spaced above source electrode by layer of air or the like
Inventor:
Giampiero Donzelli
Patented Case
View Patent ↗
Granted: Oct 3, 1989
Filed: Oct 24, 1988
Inventor
Giampiero Donzelli
Assignee (at issue)
Telettra - Telefonia Elettronica e Radio S.p.A.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.