IP Library › Granted Patent US 4,874,713
Granted Patent Utility
US 4,874,713 · App. 07/345,875

Method of making asymmetrically optimized CMOS field effect transistors

Inventor: Samuel C. Gioia
Patented Case View Patent ↗
Granted: Oct 17, 1989 Filed: May 1, 1989
Inventor
Samuel C. Gioia
Assignee (at issue)
NCR Corporation

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Quick Facts
Patent No.
US 4,874,713
App. No.
07/345,875
Filed
1989-05-01
Granted
1989-10-17
Kind
A