Granted Patent
Utility
US 4,881,111 · App. 05/973,822
Radiation hard, high emitter-base breakdown bipolar transistor
Inventor:
Thomas J. Sanders
Patented Case
View Patent ↗
Granted: Nov 14, 1989
Filed: Dec 27, 1978
Inventor
Thomas J. Sanders
Assignee (at issue)
HARRIS CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.