IP Library › Granted Patent US 4,894,694
Granted Patent Utility
US 4,894,694 · App. 07/146,068

MOSFET structure and method for making same

Inventors: Kit M. Cham, Paul Vande Voorde
Patented Case View Patent ↗
Granted: Jan 16, 1990 Filed: Jan 20, 1988
Inventors
Kit M. Cham
Paul Vande Voorde
Assignee (at issue)
Hewlett-Packard Company, L.P.

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Quick Facts
Patent No.
US 4,894,694
App. No.
07/146,068
Filed
1988-01-20
Granted
1990-01-16
Kind
A