Granted Patent
Utility
US 4,895,520 · App. 07/305,959
Method of fabricating a submicron silicon gate MOSFETg21 which has a self-aligned threshold implant
Inventor:
John E. Berg
Patented Case
View Patent ↗
Granted: Jan 23, 1990
Filed: Feb 2, 1989
Inventor
John E. Berg
Assignee (at issue)
STANDARD MICROSYSTEMS CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.