Granted Patent
Utility
US 4,908,331 · App. 07/369,443
Method of manufacturing a semiconductor device by depositing metal on semiconductor maintained at temperature to form silicide
Inventor:
Ivo Raaijmakers
Patented Case
View Patent ↗
Granted: Mar 13, 1990
Filed: Jun 21, 1989
Inventor
Ivo Raaijmakers
Assignee (at issue)
U.S. Philips Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.