Granted Patent
Utility
US 4,910,165 · App. 07/267,899
Method for forming epitaxial silicon on insulator structures using oxidized porous silicon
Inventors:
Steven S. Lee, Dim-Lee Kwong
Patented Case
View Patent ↗
Granted: Mar 20, 1990
Filed: Nov 4, 1988
Inventors
Steven S. Lee
Dim-Lee Kwong
Assignee (at issue)
NCR Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.