IP Library Granted Patent US 4,927,772
Granted Patent Utility
US 4,927,772 · App. 07/358,057

Method of making high breakdown voltage semiconductor device

Inventors: Stephen Daley Arthur, Victor A. K. Temple
Patented Case View Patent ↗
Granted: May 22, 1990 Filed: May 30, 1989
Inventors
Stephen Daley Arthur
Victor A. K. Temple
Assignee (at issue)
General Electric Company

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Quick Facts
Patent No.
US 4,927,772
App. No.
07/358,057
Filed
1989-05-30
Granted
1990-05-22
Kind
A