IP Library › Granted Patent US 4,929,992
Granted Patent Utility
US 4,929,992 · App. 06/869,759

MOS transistor construction with self aligned silicided contacts to gate, source, and drain regions

Inventors: Mammen Thomas, Matthew Weinberg
Patented Case View Patent ↗
Granted: May 29, 1990 Filed: Jun 2, 1986
Inventors
Mammen Thomas
Matthew Weinberg
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 4,929,992
App. No.
06/869,759
Filed
1986-06-02
Granted
1990-05-29
Kind
A