IP Library Granted Patent US 4,933,740
Granted Patent Utility
US 4,933,740 · App. 07/243,211

Insulated gate transistor with vertical integral diode and method of fabrication

Inventors: Bantval J. Baliga, Andrew Lee Robinson
Patented Case View Patent ↗
Granted: Jun 12, 1990 Filed: Sep 9, 1988
Inventors
Bantval J. Baliga
Andrew Lee Robinson
Assignee (at issue)
General Electric Company

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Quick Facts
Patent No.
US 4,933,740
App. No.
07/243,211
Filed
1988-09-09
Granted
1990-06-12
Kind
A