Granted Patent
Utility
US 4,933,994 · App. 07/243,200
Method for fabricating a self-aligned lightly doped drain semiconductor device with silicide
Inventor:
Richard Orban
Patented Case
View Patent ↗
Granted: Jun 19, 1990
Filed: Sep 8, 1988
Inventor
Richard Orban
Assignee (at issue)
General Electric Company
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.