Granted Patent
Utility
US 4,937,075 · App. 07/343,689
Method of making semiconductor chip having field effect transistors which have differing threshold voltages determined in a single masking step
Inventors:
Richard J. Hollingsworth, Donald E. Nelsen
Patented Case
View Patent ↗
Granted: Jun 26, 1990
Filed: Apr 27, 1989
Inventors
Richard J. Hollingsworth
Donald E. Nelsen
Assignee (at issue)
Digital Equipment Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.