IP Library Granted Patent US 4,937,075
Granted Patent Utility
US 4,937,075 · App. 07/343,689

Method of making semiconductor chip having field effect transistors which have differing threshold voltages determined in a single masking step

Inventors: Richard J. Hollingsworth, Donald E. Nelsen
Patented Case View Patent ↗
Granted: Jun 26, 1990 Filed: Apr 27, 1989
Inventors
Richard J. Hollingsworth
Donald E. Nelsen
Assignee (at issue)
Digital Equipment Corporation

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Quick Facts
Patent No.
US 4,937,075
App. No.
07/343,689
Filed
1989-04-27
Granted
1990-06-26
Kind
A