IP Library › Granted Patent US 4,942,449
Granted Patent Utility
US 4,942,449 · App. 07/173,918

Fabrication method and structure for field isolation in field effect transistors on integrated circuit chips

Inventors: Ching-Yeu Wei, Patricia A. Piacente, Henry H. Woodbury
Patented Case View Patent ↗
Granted: Jul 17, 1990 Filed: Mar 28, 1988
Inventors
Ching-Yeu Wei
Patricia A. Piacente
Henry H. Woodbury
Assignee (at issue)
General Electric Company

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Quick Facts
Patent No.
US 4,942,449
App. No.
07/173,918
Filed
1988-03-28
Granted
1990-07-17
Kind
A