Granted Patent
Utility
US 4,946,547 · App. 07/421,375
Method of preparing silicon carbide surfaces for crystal growth
Inventors:
John Williams Palmour, Hua-Shuang Kong, John Edmond
Patented Case
View Patent ↗
Granted: Aug 7, 1990
Filed: Oct 13, 1989
Inventors
John Williams Palmour
Hua-Shuang Kong
John Edmond
Assignee (at issue)
Cree Research Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.