IP Library Granted Patent US 4,952,991
Granted Patent Utility
US 4,952,991 · App. 07/397,232

Vertical field-effect transistor having a high breakdown voltage and a small on-resistance

Inventor: Chizuru Kayama
Patented Case View Patent ↗
Granted: Aug 28, 1990 Filed: Aug 23, 1989
Inventor
Chizuru Kayama
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 4,952,991
App. No.
07/397,232
Filed
1989-08-23
Granted
1990-08-28
Kind
A