IP Library Granted Patent US 4,956,306
Granted Patent Utility
US 4,956,306 · App. 07/266,756

Method for forming complementary patterns in a semiconductor material while using a single masking step

Inventors: Robert T. Fuller, Joseph C. Tsang, William R. Richards
Patented Case View Patent ↗
Granted: Sep 11, 1990 Filed: Nov 3, 1988
Inventors
Robert T. Fuller
Joseph C. Tsang
William R. Richards
Assignee (at issue)
HARRIS CORPORATION

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Quick Facts
Patent No.
US 4,956,306
App. No.
07/266,756
Filed
1988-11-03
Granted
1990-09-11
Kind
A