IP Library › Granted Patent US 4,957,873
Granted Patent Utility
US 4,957,873 · App. 07/411,196

Process for forming isolation trenches in silicon semiconductor bodies

Inventors: Sureshchandra M. Ojha, Paul J. Rosser, Philip B. Moynagh
Patented Case View Patent ↗
Granted: Sep 18, 1990 Filed: Sep 21, 1989
Inventors
Sureshchandra M. Ojha
Paul J. Rosser
Philip B. Moynagh
Assignee (at issue)
STC PLC

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Quick Facts
Patent No.
US 4,957,873
App. No.
07/411,196
Filed
1989-09-21
Granted
1990-09-18
Kind
A