Granted Patent
Utility
US 4,965,647 · App. 07/355,855
Vertical MOS field effect transistor having a high withstand voltage and a high switching speed
Inventor:
Mitsuasa Takahashi
Patented Case
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Granted: Oct 23, 1990
Filed: May 17, 1989
Inventor
Mitsuasa Takahashi
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.