Granted Patent
Utility
US 4,967,243 · App. 07/221,482
Power transistor structure with high speed integral antiparallel Schottky diode
Inventors:
Bantval J. Baliga, Martin F. Schlecht
Patented Case
View Patent ↗
Granted: Oct 30, 1990
Filed: Jul 19, 1988
Inventors
Bantval J. Baliga
Martin F. Schlecht
Assignee (at issue)
General Electric Company
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.