Granted Patent
Utility
US 4,968,636 · App. 07/407,449
Embedded isolation region and process for forming the same on silicon substrate
Inventor:
Fumio Sugawara
Patented Case
View Patent ↗
Granted: Nov 6, 1990
Filed: Sep 14, 1989
Inventor
Fumio Sugawara
Assignee (at issue)
OKI ELECTRIC INDUSTRY CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.