Granted Patent
Utility
US 4,981,549 · App. 07/313,799
Method and apparatus for growing silicon crystals
Inventors:
Ichiro Yamashita, Koutaro Shimizu, Yoshiaki Banba, Yasushi Shimanuki, Akira Higuchi, Hisashi Furuya
Patented Case
View Patent ↗
Granted: Jan 1, 1991
Filed: Feb 22, 1989
Inventors
Ichiro Yamashita
Koutaro Shimizu
Yoshiaki Banba
Yasushi Shimanuki
Akira Higuchi
Hisashi Furuya
Assignees (at issue)
Mitsubishi Kinzoku Kabushiki Kaisha
Japan Silicon Co., Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.