Granted Patent
Utility
US 4,982,258 · App. 07/188,888
Metal oxide semiconductor gated turn-off thyristor including a low lifetime region
Inventor:
Bantval J. Baliga
Patented Case
View Patent ↗
Granted: Jan 1, 1991
Filed: May 2, 1988
Inventor
Bantval J. Baliga
Assignee (at issue)
General Electric Company
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.