IP Library › Granted Patent US 4,987,464
Granted Patent Utility
US 4,987,464 · App. 07/473,740

Encapsulated FET semiconductor device with large W/L ratio

Inventors: Yasuhiro Fukuda, Shooji Kitazawa
Patented Case View Patent ↗
Granted: Jan 22, 1991 Filed: Feb 2, 1990
Inventors
Yasuhiro Fukuda
Shooji Kitazawa
Assignee (at issue)
OKI ELECTRIC INDUSTRY CO., LTD.

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Quick Facts
Patent No.
US 4,987,464
App. No.
07/473,740
Filed
1990-02-02
Granted
1991-01-22
Kind
A