IP Library Granted Patent US 4,990,976
Granted Patent Utility
US 4,990,976 · App. 07/274,918

Semiconductor device including a field effect transistor having a protective diode between source and drain thereof

Inventor: Masayuki Hattori
Patented Case View Patent ↗
Granted: Feb 5, 1991 Filed: Nov 22, 1988
Inventor
Masayuki Hattori
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 4,990,976
App. No.
07/274,918
Filed
1988-11-22
Granted
1991-02-05
Kind
A