IP Library › Granted Patent US 4,992,840
Granted Patent Utility
US 4,992,840 · App. 07/412,067

Carbon doping MOSFET substrate to suppress hit electron trapping

Inventors: Homayoon Haddad, Leonard Forbes, Wayne P. Richling
Patented Case View Patent ↗
Granted: Feb 12, 1991 Filed: Sep 21, 1989
Inventors
Homayoon Haddad
Leonard Forbes
Wayne P. Richling
Assignee (at issue)
Hewlett-Packard Company, L.P.

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Quick Facts
Patent No.
US 4,992,840
App. No.
07/412,067
Filed
1989-09-21
Granted
1991-02-12
Kind
A