IP Library Granted Patent US 4,994,142
Granted Patent Utility
US 4,994,142 · App. 07/247,839

Eliminating undercutting of mask material when etching semiconductor topography by native oxide removal

Inventor: Ami Appelbaum
Patented Case View Patent ↗
Granted: Feb 19, 1991 Filed: Sep 22, 1988
Inventor
Ami Appelbaum
Assignee (at issue)
Rockwell International Corporation

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Quick Facts
Patent No.
US 4,994,142
App. No.
07/247,839
Filed
1988-09-22
Granted
1991-02-19
Kind
A